Australian National
Fabrication Facility
NSW NODE
Australian National
Fabrication Facility
NSW NODE
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Facilities/

Equipment

Facilities
  • Equipment
  • Design House

 

 

Epitaxial Growth

Veeco III-V MBE system

Purpose: epitaxial growth of III-V materials

Location: South lab

Material systems: III-V semiconductors

Source materials: Ga, In, Al, As, Sb, Bi

Dopant materials: Si, Be

Scale/volume: Single wafers up to 75mm diameter

Specifications/resolution:

Pascal pulsed laser epitaxial system

Purpose: materials scouting via epitaxial growth techniques

Location: South lab

Substrate materials: wide range of substrate materials

Source materials: wide range of complex oxides and nitrides, target size up to 25mm diameter

Scale/volume: Single wafers up to 25mm diameter

Specifications: high energy 248nm excimer laser, in-situ reflective high energy electron diffraction (RHEED), substrate temperatures up to 1000C

Lithography

Raith 150TWO electron beam lithography system

Purpose: High resolution lithography (wafer scale)

Location: West White Area

Material systems: Semiconductors (eg. Si, GaAs ), Insulators (eg. Glass, Quartz, Sapphire)

Scale/volume: Single wafer up to 200mm diameter (max write field 150 x 150mm)

Specifications/resolution: sub-10nm lithography; 10-30keV accelerating voltage; Fixed Beam Moving Stage option (stitch-free patterning over 150mm)

FEI Sirion/NPGS electron beam lithography system

Purpose: Scanning electron microscopy, high resolution lithography (chip scale)

Location: Lower East White Area

Material systems: Semiconductors (eg. Si, GaAs ), Insulators (eg. Glass, Quartz, Sapphire)

Scale/volume: Single chip up to max 50x50mm

Specifications/resolution: 2nm imaging capability, sub-10nm lithography; 500V – 30kV accelerating voltage

Karl Suss MA6 mask aligner

Purpose: UV lithography

Location: West White Area

Material systems: Semiconductors (eg. Si, GaAs ), Insulators (eg. Glass, Quartz, Sapphire)

Scale/volume: Single wafer up to 150mm diameter

Specifications/resolution: Mercury Arc Lamp@365nm – 15mW/cm-2) sub-1micron resolution; back-side alignment capability

Quintel Q6000 mask aligner

Purpose: UV lithography

Location: Upper East White Area

Material systems: Semiconductors (eg. Si, GaAs ), Insulators (eg. Glass, Quartz, Sapphire)

Scale/volume: Single wafer up to 100mm diameter (limited accuracy for chips above 25mm)

Specifications/resolution: 1 micron resolution; single or split-field microscope

Suite of resist processing tools (spinners and hotplates)

Purpose: UV lithography

Location: All White Areas

Material systems: Semiconductors (eg. Si, GaAs ), Insulators (eg. Glass, Quartz, Sapphire)

Scale/volume: Single chip or wafer up to 150mm diameter

Specifications/resolution: spin up to 10,000rpm; bake up to 300C

Thin Film Deposition

Lesker PVD75 e-beam evaporator – Si-MOS compatible

Purpose: directional deposition of MOS-compatible metals

Location: West Grey Area

Material systems: Si-MOS compatible materials ONLY: Al, Pt, Ti, Pd

Scale/volume: Single wafer up to 150mm diameter, Can accommodate multiple smaller chips

Specifications/resolution: Si-MOS compatible materials ONLY; in-situ Ar plasma etching capability

Lesker PVD75 e-beam evaporator – general purpose

Purpose: directional deposition of metals and oxides

Location: West Grey Area

Material systems: wide range of materials including non-MOS compatible materials: Au, Al, Ti, Pt, Pd, Cr, Ni, Ge, Ag, SiO2. Other materials by prior approval.

Scale/volume: Single wafer up to 150mm diameter, can accommodate multiple smaller chips.

Specifications/resolution:

Lesker thermal evaporator

Purpose: directional deposition of metals

Location: Lower East White Area

Material systems: wide range of materials including non-MOS compatible materials: Au, AuPd, Cr, Ti, Ni, Al, Ge. Other materials by prior approval.

Scale/volume: Single wafer up to 75mm diameter.

Specifications/resolution: four source positions, rotating stage.

Edwards thermal evaporator

Purpose: directional deposition of Al

Location: Lower East White Area

Material systems: Si-MOS compatible materials ONLY; Al depositions ONLY.

Scale/volume: Single chip up to 25mm x 25mm.

Specifications/resolution: rotating stage, double angle evaporation.

HHV sputtering system

Purpose: non-directional deposition of a range of metals (multi-target)

Location: West Grey Area

Material systems: Approved target materials – Ti, Al, Cr, Au, Cu, TiO2, ZnO, SiO2, W, Nb, ITO, Evanohm. Other materials by prior approval.

Scale/volume: Single wafer.

Specifications/resolution: Five target positions; 600W rf power supply; 2kW DC power supply; heated rotary work holder (290mm diameter, to 400C), Ar, O2 and N2 processing gases, co-sputtering

Edwards sputtering system

Purpose: non-directional deposition of a range of metals (single target)

Location: Upper East Grey Area

Material systems: Approved target materials – Ti, Au, Pt, Mo. Other materials by prior approval.

Scale/volume: Single wafers up to 50mm diameter

Specifications/resolution: Single target diameter 100mm; Gases available: O2, Ar; 10-300W rf power; 10-300W DC power

CNT Savannah S200 atomic layer deposition system

Purpose: deposition of thin dielectric layers (Al2O3, HfO2)

Location: West White Area

Material systems: Al2O3, HfO2

Scale/volume: Single wafers up to 200mm diameter

Specifications/resolution:

Oxford Instruments Plasmalab 100 plasma-enhanced chemical vapour deposition system

Purpose: deposition of a-Si, Si3N4, SiO2

Location: Upper East Grey Area

Process gases: CF4, N2O, Ar, N2, SiH4, NH3

Deposition materials: a-Si, Si3N4, ammonia-free Si3N4, low stress Si3N4, SiO2

Approved substrate materials: Si, SiO2, Si3N4, sapphire, glass. Other substrates by prior approval.

Scale/volume: Single wafer up to 150mm diameter

Specifications/resolution: 13.56MHz 300W RF generator with auto matching unit. LF generator for low stress nitride films.

Hollow-cathode plasma-enhanced chemical vapour deposition system

Purpose: deposition of SiO2, a-Si, SixOyFz, doped SiO2

Location: Upper East Grey Area

Process gases: CF4, N2O, Ar, N2, SiH4, NH3

Deposition materials: SiO2, a-SI, SixOyFz, phosphorus-doped SiO2, boron-doped SiO2, germane-doped SiO2

Approved substrate materials: Si, SiO2, Si3N4, sapphire, glass

Scale/volume:

Specifications/resolution:

Dry Etching

STS inductively coupled plasma reactive ion etching system

Purpose: deep, high aspect ratio Si etching, deep SiO2 etching

Location: West Grey Area

Process gases: O2, SF6, CF4, CHF3, C4F8

Approved materials: Si, SioO2, Si3N4, high purity quartz

Approved masks: photoresists, HSQ, SiO2, a-Si, poly-Si, chrome, alumina, PMMA

Scale/volume: Single wafer up to 100mm diameter

Specifications/resolution: ICP, Bosch process for high aspect silicon etching

Oxford Instruments Plasmalab 100 reactive ion etching system

Purpose: shallow etching of Si based materials

Location: Upper East Grey Area

Process gases: O2, SF6, CF4, CHF3, Ar, CH4

Approved materials: Si, SiO2, Si3N4, Ge, (no metals)

Approved masks: photoresists, HSQ, SiO2, a-Si, poly-Si, chrome, alumina, PMMA

Scale/volume: Single wafer up to 150mm diameter

Specifications/resolution: 13.56MHz 300W RF generator with auto matching unit.

Hollow-cathode reactive ion etching system

Purpose: shallow etching of a range of materials

Location: Upper East Grey Area

Process gases: O2, SF6, CF4, CHF3, Ar, CH4

Approved materials: Si, ge, Nb, WSi, other materials by prior approval

Approved masks: considered on a case-by-case basis

Scale/volume: Single wafer up to 75mm diameter

Specifications/resolution: 13.56MHz, 30-600W RF generator

Thermal Processing

UDOX ultra-clean Si dry oxidation furnace

Purpose: growth of ultra high quality thin oxides

Location: Upper East White Area

Process gases: O2, SF6, CF4, CHF3, Ar, CH4

Material systems: Si ONLY. Prior approval for use required.

Scale/volume: Multiple (up to 20) wafers up to 100mm diameter.

Specifications/resolution: 800-1000C; gases: UHP O2 (+DCE), UHP N2; high quality thin oxides (~5nm).

Clean Si oxidation furnace

Purpose: growth of thick oxides

Location: Upper East White Area

Material systems: Fully cleaned Si ONLY. Doped Si requires prior approval.

Scale/volume: Multiple (up to 20) wafers up to 100mm diameter.

Specifications/resolution: 800-1100C; gases: O2, N2; wet (+H2O) or dry oxide growth; oxides up to 2 microns thick

Diffusion furnace – Boron

Purpose: Si p-type dopant diffusion

Location: Upper East White Area

Material systems: Fully cleaned Si ONLY.

Scale/volume: Multiple (up to 8) wafers up to 50mm diameter.

Specifications/resolution: 800-1100C; gases: N2; solid source wafer diffusion (p to p+).

Diffusion furnace – Phosphorus

Purpose: Si n-type dopant diffusion

Location: Upper East White Area

Material systems: Fully cleaned Si ONLY.

Scale/volume: Multiple (up to 8) wafers up to 50mm diameter.

Specifications/resolution: 800-1100C; gases: N2; solid source wafer diffusion (n to n+).

Anneal furnace – clean anneal

Purpose: high temperature annealing (Si only)

Location: Upper East White Area

Material systems: Si MOS compatible materials ONLY. Prior approval required for use.

Scale/volume: Multiple (up to 20) wafers up to 100mm diameter.

Specifications/resolution: Si-MOS compatible materials only; 350-500C; gases: N2, forming gas (95% N2, 5% H2).

Anneal furnace – general purpose

Purpose: high temperature annealing

Location: Upper East White Area

Material systems: Most materials, but new materials require prior approval.

Scale/volume: Multiple (up to 20) wafers up to 50mm diameter.

Specifications/resolution: 215-1100C; gases: O2, N2, forming gas (95% N2, 5% H2).

Jipelec rapid thermal annealing furnace

Purpose: rapid thermal annealing (Si only)

Location: Upper East White Area

Material systems: Si MOS compatible materials ONLY. Prior approval required for use.

Scale/volume: Single wafer up to 100mm diameter.

Specifications/resolution: Si-MOS compatible materials only; 450-1100C; UHP N2 purge

Metrology, Testing, Packaging & Bonding

J A Woollam spectroscopic ellipsometer

Purpose: optical device characterisation

Location: West Grey Area

Material systems: Most hard materials.

Scale/volume: Single wafer up to 300mm diameter.

Specifications/resolution: 210nm to1000nm (485 wavelengths); WVase software

Disco DAD3240 dicing saw

Purpose: wafer dicing

Location: Lower East Grey Area

Material systems: Semiconductors, glass, quartz, sapphire

Scale/volume: Single wafer up to 200mm diameter, max wafer thickness 1.5mm

Specifications/resolution: Smallest manageable wafer die 0.5-1mm square. Kerf widths for Si ~40-50um and harder materials ~200um

K&S Al wedge bonder

Purpose: wire bonding
Location: West Grey Area
Material systems: Al wire bonding
Scale/volume: manual bonding (single chip)
Specifications/resolution: 25 micron diameter Al wire; recommended minimum pad size 150micron x 150micron

K&S Au ball bonder

Purpose: wire bonding

Location: West Grey Area

Material systems: Au wire bonding

Scale/volume: manual bonding (single chip)

Specifications/resolution: recommended minimum pad size 150micron x 150micron

K&S Au ball bonder (digital)

Purpose: wire bonding

Location: West Grey Area

Material systems: Au wire bonding

Scale/volume: manual or automatic bonding (single chip)

Specifications/resolution: recommended minimum pad size 150micron x 150micron

 

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NSW Government Department of Industry
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