Epitaxial Growth
Veeco III-V MBE system
Purpose: epitaxial growth of III-V materials
Location: South lab
Material systems: III-V semiconductors
Source materials: Ga, In, Al, As, Sb, Bi
Dopant materials: Si, Be
Scale/volume: Single wafers up to 75mm diameter
Specifications/resolution:
Pascal pulsed laser epitaxial system
Purpose: materials scouting via epitaxial growth techniques
Location: South lab
Substrate materials: wide range of substrate materials
Source materials: wide range of complex oxides and nitrides, target size up to 25mm diameter
Scale/volume: Single wafers up to 25mm diameter
Specifications: high energy 248nm excimer laser, in-situ reflective high energy electron diffraction (RHEED), substrate temperatures up to 1000C
Lithography
Raith 150TWO electron beam lithography system
Purpose: High resolution lithography (wafer scale)
Location: West White Area
Material systems: Semiconductors (eg. Si, GaAs ), Insulators (eg. Glass, Quartz, Sapphire)
Scale/volume: Single wafer up to 200mm diameter (max write field 150 x 150mm)
Specifications/resolution: sub-10nm lithography; 10-30keV accelerating voltage; Fixed Beam Moving Stage option (stitch-free patterning over 150mm)
FEI Sirion/NPGS electron beam lithography system
Purpose: Scanning electron microscopy, high resolution lithography (chip scale)
Location: Lower East White Area
Material systems: Semiconductors (eg. Si, GaAs ), Insulators (eg. Glass, Quartz, Sapphire)
Scale/volume: Single chip up to max 50x50mm
Specifications/resolution: 2nm imaging capability, sub-10nm lithography; 500V – 30kV accelerating voltage
Karl Suss MA6 mask aligner
Purpose: UV lithography
Location: West White Area
Material systems: Semiconductors (eg. Si, GaAs ), Insulators (eg. Glass, Quartz, Sapphire)
Scale/volume: Single wafer up to 150mm diameter
Specifications/resolution: Mercury Arc Lamp@365nm – 15mW/cm-2) sub-1micron resolution; back-side alignment capability
Quintel Q6000 mask aligner
Purpose: UV lithography
Location: Upper East White Area
Material systems: Semiconductors (eg. Si, GaAs ), Insulators (eg. Glass, Quartz, Sapphire)
Scale/volume: Single wafer up to 100mm diameter (limited accuracy for chips above 25mm)
Specifications/resolution: 1 micron resolution; single or split-field microscope
Suite of resist processing tools (spinners and hotplates)
Purpose: UV lithography
Location: All White Areas
Material systems: Semiconductors (eg. Si, GaAs ), Insulators (eg. Glass, Quartz, Sapphire)
Scale/volume: Single chip or wafer up to 150mm diameter
Specifications/resolution: spin up to 10,000rpm; bake up to 300C
Thin Film Deposition
Lesker PVD75 e-beam evaporator – Si-MOS compatible
Purpose: directional deposition of MOS-compatible metals
Location: West Grey Area
Material systems: Si-MOS compatible materials ONLY: Al, Pt, Ti, Pd
Scale/volume: Single wafer up to 150mm diameter, Can accommodate multiple smaller chips
Specifications/resolution: Si-MOS compatible materials ONLY; in-situ Ar plasma etching capability
Lesker PVD75 e-beam evaporator – general purpose
Purpose: directional deposition of metals and oxides
Location: West Grey Area
Material systems: wide range of materials including non-MOS compatible materials: Au, Al, Ti, Pt, Pd, Cr, Ni, Ge, Ag, SiO2. Other materials by prior approval.
Scale/volume: Single wafer up to 150mm diameter, can accommodate multiple smaller chips.
Specifications/resolution:
Lesker thermal evaporator
Purpose: directional deposition of metals
Location: Lower East White Area
Material systems: wide range of materials including non-MOS compatible materials: Au, AuPd, Cr, Ti, Ni, Al, Ge. Other materials by prior approval.
Scale/volume: Single wafer up to 75mm diameter.
Specifications/resolution: four source positions, rotating stage.
Edwards thermal evaporator
Purpose: directional deposition of Al
Location: Lower East White Area
Material systems: Si-MOS compatible materials ONLY; Al depositions ONLY.
Scale/volume: Single chip up to 25mm x 25mm.
Specifications/resolution: rotating stage, double angle evaporation.
HHV sputtering system
Purpose: non-directional deposition of a range of metals (multi-target)
Location: West Grey Area
Material systems: Approved target materials – Ti, Al, Cr, Au, Cu, TiO2, ZnO, SiO2, W, Nb, ITO, Evanohm. Other materials by prior approval.
Scale/volume: Single wafer.
Specifications/resolution: Five target positions; 600W rf power supply; 2kW DC power supply; heated rotary work holder (290mm diameter, to 400C), Ar, O2 and N2 processing gases, co-sputtering
Edwards sputtering system
Purpose: non-directional deposition of a range of metals (single target)
Location: Upper East Grey Area
Material systems: Approved target materials – Ti, Au, Pt, Mo. Other materials by prior approval.
Scale/volume: Single wafers up to 50mm diameter
Specifications/resolution: Single target diameter 100mm; Gases available: O2, Ar; 10-300W rf power; 10-300W DC power
CNT Savannah S200 atomic layer deposition system
Purpose: deposition of thin dielectric layers (Al2O3, HfO2)
Location: West White Area
Material systems: Al2O3, HfO2
Scale/volume: Single wafers up to 200mm diameter
Specifications/resolution:
Oxford Instruments Plasmalab 100 plasma-enhanced chemical vapour deposition system
Purpose: deposition of a-Si, Si3N4, SiO2
Location: Upper East Grey Area
Process gases: CF4, N2O, Ar, N2, SiH4, NH3
Deposition materials: a-Si, Si3N4, ammonia-free Si3N4, low stress Si3N4, SiO2
Approved substrate materials: Si, SiO2, Si3N4, sapphire, glass. Other substrates by prior approval.
Scale/volume: Single wafer up to 150mm diameter
Specifications/resolution: 13.56MHz 300W RF generator with auto matching unit. LF generator for low stress nitride films.
Hollow-cathode plasma-enhanced chemical vapour deposition system
Purpose: deposition of SiO2, a-Si, SixOyFz, doped SiO2
Location: Upper East Grey Area
Process gases: CF4, N2O, Ar, N2, SiH4, NH3
Deposition materials: SiO2, a-SI, SixOyFz, phosphorus-doped SiO2, boron-doped SiO2, germane-doped SiO2
Approved substrate materials: Si, SiO2, Si3N4, sapphire, glass
Scale/volume:
Specifications/resolution:
Dry Etching
STS inductively coupled plasma reactive ion etching system
Purpose: deep, high aspect ratio Si etching, deep SiO2 etching
Location: West Grey Area
Process gases: O2, SF6, CF4, CHF3, Ar, CH4
Approved materials: Si, SioO2, Si3N4, high purity quartz
Approved masks: photoresists, HSQ, SiO2, a-Si, poly-Si, chrome, alumina, PMMA
Scale/volume: Single wafer up to 100mm diameter
Specifications/resolution: ICP, Bosch process for high aspect silicon etching
Oxford Instruments Plasmalab 100 reactive ion etching system
Purpose: shallow etching of Si based materials
Location: Upper East Grey Area
Process gases: O2, SF6, CF4, CHF3, Ar, CH4
Approved materials: Si, SiO2, Si3N4, Ge, (no metals)
Approved masks: photoresists, HSQ, SiO2, a-Si, poly-Si, chrome, alumina, PMMA
Scale/volume: Single wafer up to 150mm diameter
Specifications/resolution: 13.56MHz 300W RF generator with auto matching unit.
Hollow-cathode reactive ion etching system
Purpose: shallow etching of a range of materials
Location: Upper East Grey Area
Process gases: O2, SF6, CF4, CHF3, Ar, CH4
Approved materials: Si, ge, Nb, WSi, other materials by prior approval
Approved masks: considered on a case-by-case basis
Scale/volume: Single wafer up to 75mm diameter
Specifications/resolution: 13.56MHz, 30-600W RF generator
Thermal Processing
UDOX ultra-clean Si dry oxidation furnace
Purpose: growth of ultra high quality thin oxides
Location: Upper East White Area
Process gases: O2, SF6, CF4, CHF3, Ar, CH4
Material systems: Si ONLY. Prior approval for use required.
Scale/volume: Multiple (up to 20) wafers up to 100mm diameter.
Specifications/resolution: 800-1000C; gases: UHP O2 (+DCE), UHP N2; high quality thin oxides (~5nm).
Clean Si oxidation furnace
Purpose: growth of thick oxides
Location: Upper East White Area
Material systems: Fully cleaned Si ONLY. Doped Si requires prior approval.
Scale/volume: Multiple (up to 20) wafers up to 100mm diameter.
Specifications/resolution: 800-1100C; gases: O2, N2; wet (+H2O) or dry oxide growth; oxides up to 2 microns thick
Diffusion furnace – Boron
Purpose: Si p-type dopant diffusion
Location: Upper East White Area
Material systems: Fully cleaned Si ONLY.
Scale/volume: Multiple (up to 8) wafers up to 50mm diameter.
Specifications/resolution: 800-1100C; gases: N2; solid source wafer diffusion (p to p+).
Diffusion furnace – Phosphorus
Purpose: Si n-type dopant diffusion
Location: Upper East White Area
Material systems: Fully cleaned Si ONLY.
Scale/volume: Multiple (up to 8) wafers up to 50mm diameter.
Specifications/resolution: 800-1100C; gases: N2; solid source wafer diffusion (n to n+).
Anneal furnace – clean anneal
Purpose: high temperature annealing (Si only)
Location: Upper East White Area
Material systems: Si MOS compatible materials ONLY. Prior approval required for use.
Scale/volume: Multiple (up to 20) wafers up to 100mm diameter.
Specifications/resolution: Si-MOS compatible materials only; 350-500C; gases: N2, forming gas (95% N2, 5% H2).
Anneal furnace – general purpose
Purpose: high temperature annealing
Location: Upper East White Area
Material systems: Most materials, but new materials require prior approval.
Scale/volume: Multiple (up to 20) wafers up to 50mm diameter.
Specifications/resolution: 215-1100C; gases: O2, N2, forming gas (95% N2, 5% H2).
Jipelec rapid thermal annealing furnace
Purpose: rapid thermal annealing (Si only)
Location: Upper East White Area
Material systems: Si MOS compatible materials ONLY. Prior approval required for use.
Scale/volume: Single wafer up to 100mm diameter.
Specifications/resolution: Si-MOS compatible materials only; 450-1100C; UHP N2 purge
Metrology, Testing, Packaging & Bonding
J A Woollam spectroscopic ellipsometer
Purpose: optical device characterisation
Location: West Grey Area
Material systems: Most hard materials.
Scale/volume: Single wafer up to 300mm diameter.
Specifications/resolution: 210nm to1000nm (485 wavelengths); WVase software
Disco DAD3240 dicing saw
Purpose: wafer dicing
Location: Lower East Grey Area
Material systems: Semiconductors, glass, quartz, sapphire
Scale/volume: Single wafer up to 200mm diameter, max wafer thickness 1.5mm
Specifications/resolution: Smallest manageable wafer die 0.5-1mm square. Kerf widths for Si ~40-50um and harder materials ~200um
K&S Al wedge bonder
Purpose: wire bonding
Location: West Grey Area
Material systems: Al wire bonding
Scale/volume: manual bonding (single chip)
Specifications/resolution: 25 micron diameter Al wire; recommended minimum pad size 150micron x 150micron
K&S Au ball bonder
Purpose: wire bonding
Location: West Grey Area
Material systems: Au wire bonding
Scale/volume: manual bonding (single chip)
Specifications/resolution: recommended minimum pad size 150micron x 150micron
K&S Au ball bonder (digital)
Purpose: wire bonding
Location: West Grey Area
Material systems: Au wire bonding
Scale/volume: manual or automatic bonding (single chip)
Specifications/resolution: recommended minimum pad size 150micron x 150micron
