Purpose: shallow etching of a range of materials

Location: Upper East Grey Area

Process gases: O2, SF6, CF4, CHF3, Ar, CH4

Approved materials: Si, ge, Nb, WSi, other materials by prior approval

Approved masks: considered on a case-by-case basis

Scale/volume: Single wafer up to 75mm diameter

Specifications/resolution: 13.56MHz, 30-600W RF generator