Purpose: deep, high aspect ratio Si etching, deep SiO2 etching

Location: West Grey Area

Process gases: O2, SF6, CF4, CHF3, C4F8

Approved materials: Si, SioO2, Si3N4, high purity quartz

Approved masks: photoresists, HSQ, SiO2, a-Si, poly-Si, chrome, alumina, PMMA

Scale/volume: Single wafer up to 100mm diameter

Specifications/resolution: ICP, Bosch process for high aspect silicon etching