Purpose: growth of ultra high quality thin oxides
Location: Upper East White Area
Process gases: O2, SF6, CF4, CHF3, Ar, CH4
Material systems: Si ONLY. Prior approval for use required.
Scale/volume: Multiple (up to 20) wafers up to 100mm diameter.
Specifications/resolution: 800-1000C; gases: UHP O2 (+DCE), UHP N2; high quality thin oxides (~5nm).