| Location | UNSW – Upper East Lab (Grey Area) |
| Temperature range | 750 – 975 °C |
| Substrates types allowed | Si wafer, with either P or B dopants only |
| Substrate sizes | Up to 2” |
| Pre-requisites | Wafers processed in-house only, full cleaned |
| Gases available | N2 |
| Source wafers | Solid source |
Thermal Processing & Ion Implantation
Boron Diffusion Furnace
Clean Anneal Furnace
| Location | UNSW – Upper East Lab (Grey Area) |
| Temperature range | 350 – 500 °C |
| Substrates types allowed | Si wafer, with either P or B dopants only |
| Substrate sizes | Up to 4” |
| Pre-requisites | Wafers processed in-house only, full cleaned |
| Gases available | N2, forming gas |
Clean Si Oxidation Furnace
| Location | UNSW – Upper East Lab (Grey Area) |
| Tube size | 5” tube |
| Wafer size | 2” up to 4” wafers |
| Gasses | N2, O2 |
| Temperature range | 400 – 1100C |
| Restrictions | Boron and phosphorus doped Si only |
GaAs ULVAC MILA-5000 Annealing Furnace
| Location | UNSW – Lower East Lab (White Area) |
| Heating rate | 50°C/s high speed heating |
| Gas | Forming gas |
| Sample size | Up to 25 mm by 25 mm |
| Material restriction | GaAs compatible material only |
| Temperature Range | RT – 800 deg |
| Graphite plate option | Available |
GP Anneal Furnace
| UNSW – Upper East Lab (Grey Area) | |
| Tube size | 3” tube |
| Wafer size | Small chips up to 2” wafers |
| Gasses | N2, O2, forming gas |
| Temperature range | 200 – 1100C |
| Restrictions | General purpose |
GP ULVAC MILA-5000 Annealing Furnace
| Location | UNSW – Lower East Lab (White Area) |
| Heating rate | 50°C/s high speed heating |
| Gas | Forming gas |
| Sample size | Up to 25 mm by 25 mm |
| Material restriction | General purpose |
| Temperature Range | RT – 800 deg |
IBS Ion Implanter
| Location | UNSW – Far East Lab |
| Ion energy | 25-200 keV (single charge) |
| Ion current | Greater than 1 mA (typically ~100s uA) |
| Species | P, B, Sb, Ar, H, N |
| Substrate size | Max 6” wafer |
| Substrate carrier | 4 positions |
| Substrate angle to beam | Normal or 7° |
Jipelec RTA
| Location | UNSW – Upper East Lab (Grey Area) |
| Temperature range | 400 – 1050 °C |
| Substrates types allowed | Si wafer, with either P or B dopants only |
| Substrate sizes | Up to 4” |
| Pre-requisites | Wafers processed in-house only, full cleaned |
| Gases available | N2 |
Muffle Furnace
| Location | UNSW – South Lab (Test Area) |
| Working volume | 3.5 L |
| Temperature range | 50 – 1000°C |
| Gases | N2 |
Phosphorus Diffusion Furnace
| Location | UNSW – Upper East Lab (Grey Area) |
| Temperature range | 800 – 955 °C |
| Substrates types allowed | Si wafer, with either P or B dopants only |
| Substrate sizes | Up to 2” |
| Pre-requisites | Wafers processed in-house only, full cleaned |
| Gases available | N2 |
| Source wafers | Solid source |
UDOX Furnace
| Location | UNSW – Upper East Lab (Grey Area) |
| Temperature range | 800 – 1000 °C |
| Substrates types allowed | Si wafer, with either P or B dopants only |
| Substrate sizes | Up to 2” |
| Pre-requisites | Wafers processed in-house only, full cleaned |
| Gases available | N2, ultra-dry oxygen |
