| Location | UNSW – South Lab |
| Purpose | epitaxial growth of III-V materials |
| Material systems | III-V semiconductors |
| Source materials | Ga, In, Al, As, Sb, Bi |
| Dopant materials | Si, Be |
| Scale/volume | wafers up to 75mm diameter |
| Location | UNSW – South Lab |
| Purpose | epitaxial growth of III-V materials |
| Material systems | III-V semiconductors |
| Source materials | Ga, In, Al, As, Sb, Bi |
| Dopant materials | Si, Be |
| Scale/volume | wafers up to 75mm diameter |