All Equipment

3D Microscope Leica DCM8 *

Purpose A metrology tool that leverages four optical modalities to image 3D topology and thin film/s properties with high automation
Location Metrology Bay, RPF Cleanroom
Scale / volume This microscope can accommodate samples up to 150mm diameter and 20cm in height, 3D topology mapping is limited to within a 40mm Z-range.
Specs / resolution 3D topography can be mapped at a resolution down to ≈300nm in the XY plane and less than 1 nm in Z; modalities consist of confocal, three variants of interferometry, focal plane mapping, and reflectometry
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

3D Printer – Filament Flashforge Creator Pro *

Purpose 3D printing of low temperature flexible materials
Location RPF Madsen Lab 224A
Material systems For printing Thermoplastic Polyurethane (TPU), plus other soft and flexible materials
Scale / volume Maximum build area of 227mm x 150mm x 148mm
Specs / resolution 120°C heating build plate; double nozzle design; has the ability to print preforms with complicated structures and then draw those into fibre whilst maintaining that structure
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

3D Printer – Filament Funmat *

Purpose The Funmat HT 3D printer is fully capable of 3D printing high-performance functional materials like PEEK, ULTEM and PPSU, in addition to a broad range of engineering thermoplastics
Location RPF Madsen Lab 224A
Material systems Advanced thermal system design of this 3D printer includes a 90°C constant temperature chamber, up to 160°C heated build plate, and 450°C high-temperature extruder with all-metal hot end
Scale / volume Build volume of the FUNMAT HT is 260mm x 260mm x 260mm
Specs / resolution Users can achieve down to 50 micron high resolution industrial quality 3D printing
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

3D Printer – Resin Formlabs *

Purpose The Formlabs 3B SLA printer has been optimised for biocompatible materials
Location RPF Madsen Lab 224A
Material systems Biocompatible materials
Scale / volume Build volumes of up to 14.5cm x 14.5cm x 18.5cm
Specs / resolution Uses a flexible resin tank and a Light Processing Unit to produce consistent, accurate prints with X-Y resolution of down to 25µm; able to rapidly produce incredible surface finishes and high accuracy parts
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

4-point Probe

Location UNSW – Upper East Lab (White Area)
Substrates types allowed Any
Substrate sizes 30 mm x 30 mm to 2”
Probes Four-point probe
Output Sheet resistance for given current

Atomic Force Microscope Bruker Icon *

Purpose A metrology tool that measures micron to sub-nanometre surface topology and material properties with nanometre sharp mechanical probes
Location Metrology Bay, RPF Cleanroom
Scale / volume This tool can accommodate 200mm wafers; maximum imaging area is 90 x 90 µm with a maximum Z-range of 10 µm
Specs / resolution The resolution limit is dependent on sample and technique though generally on the order of few nm in XY and below 1nm in Z; many properties can be measured / investigated including topology, conductivity, capacitance, modulus, adhesion, etc.
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

Atomic Layer Deposition Picosun R200 *

Purpose A thin-film deposition tool that deposits Al2O3 and HfO2 via sequential, self-limiting process cycles with precise thickness control
Location Plasma Etch & Deposition Bay, RPF Cleanroom
Material systems Thermal, plasma, and ozone processes
Scale / volume Small pieces up to 6 inch substrates
Specs / resolution Specified to be able to deposit nitrides; techniques include thermal, plasma, and ozone processes; low temperature deposition process with uniform and conformal films
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

Boron Diffusion Furnace

Location UNSW – Upper East Lab (Grey Area)
Temperature range 750 – 975 °C
Substrates types allowed Si wafer, with either P or B dopants only
Substrate sizes Up to 2”
Pre-requisites Wafers processed in-house only, full cleaned
Gases available N2
Source wafers Solid source

Bruker Dimension Edge AFM

Location UNSW – Lower East Lab (White Area)
X-Y Scan Range 90μm x 90μm typical, 85μm minimum
Z Range 10μm typical
Vertical Noise Floor <50pm RMS
Sample/Size/Holder 150mm vacuum chuck, 15mm thick
Scanning modes ScanAsyst, Tapping, Contact

Cascade Probe Station

Location UNSW – South Lab (Test Area)
Model Keithley Semiconductor Characterization system (4200SCS/C)
Available options CV unit (4210-CVU),

Remote Preamp Option (4200-PA),

Medium power SMU x 2 (4200-SMU),

SMA to SSMC Dual with Local Ground (4200-PRB-C)

Caustic Develop Wet Bench (ReynoldsTech)

Purpose Exhausted wet bench used for handling of caustic based chemicals – primarily TMAH based developers
Location Wet Etch Bay, RPF Cleanroom
Material systems Wafers and/or photomasks; TMAH based developers
Scale / volume Substrates up to 7 inch square in size
Specs / resolution Includes automated spin and spray process unit for development of substrates

Chromium Etch Wet Bench (ReynoldsTech)

Purpose Exhausted wet bench used for handling of chromium etch chemicals
Location Wet Etch Bay, RPF Cleanroom
Material systems Photomask (chromium etch process); substrate (etch chromium structures)
Scale / volume Etch substrates up to 7 inch square in size
Specs / resolution Includes automated spin process unit

Clean Anneal Furnace

Location UNSW – Upper East Lab (Grey Area)
Temperature range 350 – 500 °C
Substrates types allowed Si wafer, with either P or B dopants only
Substrate sizes Up to 4”
Pre-requisites Wafers processed in-house only, full cleaned
Gases available N2, forming gas

Clean Si Oxidation Furnace

Location UNSW – Upper East Lab (Grey Area)
Tube size 5” tube
Wafer size 2” up to 4” wafers
Gasses N2, O2
Temperature range 400 – 1100C
Restrictions Boron and phosphorus doped Si only

CNT Savannah S200 atomic layer deposition system

Location UNSW – West Lab (White Area)
Materials AlOx, HfO2
Temperature range 80 – 280C
Wafer size Small chips up to 6”
Precursors H2O, TMA, TDM
Restrictions General purpose

Coater Brewer Science CB-200

Purpose Spin coater for non-photo-sensitive polymer coating and baking of small samples
Location RPF Lab 3021
Material systems Any material
Scale / volume Can fit in up to 8 inch round wafer and 6 inch square substrate
Specs / resolution The system has proximity, contact and vacuum contact baking capability

COMSOL Multiphysics

Access mode Remote via VPN
License CPU locked
No of seats 1
Version 5.1
Available modules AC/DC Module
MEMS Module
RF Module
Wave Optics Module
Heat Transfer Module
Semiconductor Module
Structural Mechanics Module
Chemical Reaction Module
Microfluidics Module
Electrochemistry Module
Material LibraryLivelink for MATLAB and AutoCAD
Hardware spec 1500W power supply,
Intel Xeon E5-2697V3 14 Core 2.6GHz CPU (x 2),
DDR4 LRDIMM 32G (x 8),
Leadtek quadro k620 2GB

DMO MicroWriter ML3 Pro

Location UNSW – Upper East Lab (White Area)
Wafer sizes Up to 200 mm by 200 mm, 15 mm max. thickness
Light source 365nm
Avail. resolutions 0.5 µm, 0.7 µm, 1 µm, 2 µm and 5 µm at 365 nm
Greyscale levels 256 levels

Dektak 150

Location UNSW – West Lab (White Area)
Scan Length Range 55 mm
Data Points Per Scan 60,000 maximum
Max. Sample Thickness Up to 100 mm
Max. Wafer Size 150 mm
Height Repeatability 6Å, 1 sigma on 1 μm step
Vertical Range 524 μm
Vertical Resolution 1 Å max. (at 6.55 μm range)
Stylus Force 1 – 15 mg
Sample Viewing 640 x 480-pixel (1/3 in.-format) camera, USB; fixed magnification, 2.6 mm FOV (166X with 17 in. monitor)
Sample Stage Manual X/Y/Θ, 100 x 100 mm X-Y translation,360° rotation, manual levelling
Stylus radius 6.5 µm

Dektak 2A

Location UNSW – West Lab (Grey Area)
Sample size From small chips up to 4”
Max Scan Length 30mm
Max depth 30 micron

Dektak 3030

Location UNSW – Lower East Lab (White Area)
Sample stage diameter 165 mm
Max sample thickness 45 mm
Max sample weight 0.5 kg
Stylus tracking force 1 – 40 mg
Sample stage translation X Axis, +76mm (from center); Y Axis, 76mm
Sample stage rotation Theta = 360°
Z – resolution 1A/65 kÅ; 10A/655 kÅ; 20A/1310 kÅ
Leveling Manual, 2-point or cursor levelling
Stylus diameter 12.5 µm

Dicing Saw ADT 7122 *

Purpose A spindle dicing system that offers customizable and/or full-automatic dicing solution
Location RPF Lab 3021
Material systems Wafers, silicon, glass, ceramic
Scale / volume Capable of cutting semiconductor wafers, silicon, glass, ceramic up to 6 inches
Specs / resolution High accuracy up to 1µm
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

Die Bonder Fine Tech Lambda

Purpose The die bonder provides sub-micron precision die attach and advanced flip-chip packaging capabilities
Location RPF Cleanroom
Material systems Epoxy / adhesive; formic acid; thermo-compression; thermo-sonic bonding
Scale / volume Heated stage accommodates up to 50mm x 50mm samples; maximum chip size for the bonder pick is 15mm x 15mm
Specs / resolution Precision placement and alignment; thermo compression; ultrasonic or thermosonic bonding, formic acid, adhesive dispense module

Dry Film Laminator Fortex FL-0305-01 *

Purpose Uniform resist coverage and an alternative to thick liquid resist spin coating; the material feed type is an automatic roll of film and pre-cut sheets
Location Photo-Lithography Bay, RPF Cleanroom
Material systems Substrate material compatibility: wafers (silicon, glass, sapphire), brass, foils, steel, PCB
Scale / volume Substrate thickness: up to 4mm; substrate size: from 5mm x 5mm up; 305mm x up to any desired length
Specs / resolution Compatible with all dry film thickness range, but RPF stocks 50µm, 100µm, 200µm, and 500µm
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

E-Beam Thermal Evaporator AJA ATC-1800-E *

Purpose A thin film deposition tool using e-beam or thermal process to deposit metal and oxides at nanometer scale thickness
Location Plasma Etch & Deposition Bay, RPF Cleanroom
Material systems Available materials include Ag, Al, Au, Cr, Ge, Ni, Ti, SiO2, TiO2, Ta2O, and Pt
Scale / volume Small pieces to 6 inch substrates
Specs / resolution Angled deposition capability; cooled rotating substrate holder; in-situ ion milling with Argon; controlled oxidation capability
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

EBL Elionix ELS-F125 *

Purpose The Elionix electron beam lithography system has an acceleration voltage of 125kV and is capable of patterning high resolution features
Location E-Beam Bay, RPF Cleanroom
Material systems EBL resist coated wafers
Scale / volume Accommodates small samples up to 6 inch wafers
Specs / resolution 2nm beam diameter at 500pA beam current; dynamic focus and stigmatism adjustment; maximum 500um write field; field stitching error smaller than 20nm; overlay alignment better than 20nm
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

EBL Spinner Wet Bench (ReynoldsTech)

Purpose Exhausted wet bench used for resist coating processes dedicated to electron beam lithography resists
Location Wet Process Bay, RPF Cleanroom
Material systems EBL resists
Scale / volume Accommodates small samples up to 6 inch wafers
Specs / resolution Includes two spinners dedicated to PMMA and CSAR / ZEP processes

Edwards Auto 306 Thermal Evaporator (Aluminum SET)

Location UNSW – Lower East Lab (White Area)
Thin film material Aluminium only
Gas Oxygen, upper chamber for oxidation of Al only
Sample size Up to 1 inch diameter (upper chamber)
Substrate material restriction silicon compatible material only

Edwards Auto 306 Thermal Evaporator (AuBe)

Location UNSW – Lower East Lab (White Area)
Thin film material AuBe, Ti, Au
Base pressure 9e-7 mbar
Sample size Up to 3 inch in diameter
Substrate material restriction Gallium arsenide compatible material only

Edwards Evaporator

Location UNSW – South Lab (Test Area)
Maximum wafer size 150 mm round
Throw 400 mm
Boat contact size 3/8” (~10 mm)
Maximum number of evaporator sources 4
Maximum power 250 W
Additional process gases available Ar, O2
Other specifications Glow discharge of process gases

Edwards Sputterer

Location UNSW – South Lab (Tese Area)
Sample size Up to 4” wafer
Target size 4” (Single target)
Material available Ti and Cr

Other materials by prior approval

Power sources DC 10-300W and RF 10-300W
Process gases Ar, N2 and O2

Electrical Probe Station Suss PM 5

Purpose 4 probe DC probe station for measuring electrical properties of materials and devices
Location RPF Lab 3021
Scale / volume Substrate size up to 6 inch wafer
Specs / resolution Can heat substrate up to 120°C during measurement

Ellipsometer JA Woollam M2000 *

Purpose A metrology tool that measures the thickness & refractive index of thin films and multi-layered films using polarised light
Location Plasma Etch & Deposition Bay, RPF Cleanroom
Material systems Thin films
Scale / volume Small samples to 6 inch wafers
Specs / resolution Measurement wavelength ranges from 200nm to 1000nm
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

Etch Spin Rinse Dryer (ReynoldsTech)

Purpose Automated batch wafer cleaning tool
Location Wet Etch Bay, RPF Cleanroom
Material systems Can batch process substrates in a cassette
Scale / volume 2 inch, 4 inch, and 6 inch wafers; 4 inch and 5 inch photomasks
Specs / resolution Can accommodate up to 6 inch wafers, interchangeable rotors

Lesker Thermal Evaporator

Location UNSW – Lower East Lab (White Area)
Thin film material Ge, Ni, Ti, Au, AuGe, PdAu, Cr, Al, Co
Base pressure 9e-7 mbar
Sample size Up to 3 inch in diameter
Rotation Angled evaporation with rotation

FEI Sirion Electron Beam Lithography System

Location UNSW – Lower East Lab (White Area)
Wafer holder Up to 2”
Maximum write area Up to 1 mm x 1 mm per pixel
Pixel stitching accuracy ~ 2 um
Smallest feature size ~ 20 nm in ~20 um x 20 um pixel
SEM Imaging resolution ~2 nm
Patterning software NPGS

FEI XL30 Electron Beam Lithography System

Location UNSW – Lower East Lab (White Area)
Wafer holder Up to 2”
Maximum write area Up to 1 mm x 1 mm per pixel
Pixel stitching accuracy ~ 2 um
Smallest feature size ~ 20 nm in ~20 um x 20 um pixel
SEM Imaging resolution ~2 nm
Patterning software NPGS

FIB-SEM Zeiss Crossbeam 550XL *

Purpose A multi-purpose platform that enables advanced Scanning Electron Microscopy imaging and analysis as well as Focus Ion Beam milling & deposition for cross-section profile inspection and other applications
Location E-beam Bay, RPF Cleanroom
Material systems It is fitted with options for elemental analysis, plasma cleaning, beam directed deposition and physical / chemical etching, diffraction based structural analysis, nano / micro manipulation, and electrical probing
Scale / volume Imaging of non-conductive materials; elemental & crystallographic analysis and mapping @ ≥ 5nm; can accommodate samples as large as 150 mm wafers and 7 inch masks; 2nm image resolution; 4-10nm milling, etching, deposition
Specs / resolution The FIB-SEM is a very versatile high performance tool for macro / micro / nano imaging, analysis, fabrication, manipulation, and characterisation; full analysis of any sample; in-situ milling / circuit edit / device modifications; metrology; charge compensated imaging and milling imaging; cross-sectioning; transmission imaging
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

Fibre Draw Tower

Purpose Six meter dual sided Heathway fibre draw tower for primary and secondary drawing
Location RPF Physics Lab 404
Material systems Polymers (e.g. Polyurethane, PMMA, Zeonex, Polycarbonate, TPU); soft glass (soda-lime, borosilicate, chalcogenide)
Scale / volume Waveguides (solid, microstructure, air-core); co-drawn carbon elements and wires (e.g. ~500nm x 150nm wires); microstructure (internal air / fluidic channels)
Specs / resolution Three furnace options for various preform sizes and temperature requirements; pressurised fibre coating system; tractor draw unit for capillary / cane drawing; pressurised drawing system; spinning motor for drawing spun fibres

GaAs ULVAC MILA-5000 Annealing Furnace

Location UNSW – Lower East Lab (White Area)
Heating rate 50°C/s high speed heating
Gas Forming gas
Sample size Up to 25 mm by 25 mm
Material restriction GaAs compatible material only
Temperature Range RT – 800 deg
Graphite plate option Available

General Purpose Acid Wet Benches (ReynoldsTech)

Purpose Exhausted wet bench used for handling of general purpose acids
Location Wet Etch Bay, RPF Cleanroom
Material systems General acid chemicals; substrates
Specs / resolution Includes two integrated stirring hotplates, heated and filtered process tank, and cascading tank for batch processing

General Purpose Caustic Wet Bench (ReynoldsTech)

Purpose Exhausted wet bench used for handling of general purpose caustic based chemicals
Location Wet Etch Bay, RPF Cleanroom
Material systems General caustic / base chemicals; substrates
Specs / resolution Includes integrated stirring hotplate, heated and filtered process tank, and cascading tank for batch processing

GP Anneal Furnace

UNSW – Upper East Lab (Grey Area)
Tube size 3” tube
Wafer size Small chips up to 2” wafers
Gasses N2, O2, forming gas
Temperature range 200 – 1100C
Restrictions General purpose

GP ULVAC MILA-5000 Annealing Furnace

Location UNSW – Lower East Lab (White Area)
Heating rate 50°C/s high speed heating
Gas Forming gas
Sample size Up to 25 mm by 25 mm
Material restriction General purpose
Temperature Range RT – 800 deg

HF Constant Temperature Bath

Location Upper East Lab (White Area)
Constant temperature bath 30C
HF solutions available – Si/SiO2 only HF 1:10 (HF 49% : DI water),

BHF 1:5 (HF49% : Ammonium fluoride 40%),

BHF 1:15 (HF49% : Ammonium fluoride 40%)

HF solutions available – general purpose (GP) BHF 1:15 (HF49% : Ammonium fluoride 40%)

HF Wet Bench (ReynoldsTech)

Purpose Exhausted wet bench used for handling of hydrofluoric acid
Location Wet Etch Bay, RPF Cleanroom
Material systems Hydrofluoric acid
Scale / volume Small samples up to 4 inch wafers
Specs / resolution Includes heated process tank and cascading tank for rinsing

Hollow Cathode Reactive Ion Etching System

Location UNSW – Upper East Lab (Grey Area)
Target Area 4”
Substrate size < 4”
Gases Ar, O2, CF4, CHF3, SF6
Max process pressure Up to 130 mTorr
Max target power density 1.7W / cm2

Hotplate Tower (ReynoldsTech)

Purpose Exhausted stacked hotplates for baking during solvent based processes
Location Wet Process Bay, RPF Cleanroom
Material systems Resist baking
Scale / volume Accommodates small samples up to 6 inch wafers
Specs / resolution Includes 6 hotplates dedicated to different temperature ranges – used for baking / outgassing purposes

i-line Stepper ASML PAS 5500/100

Purpose A high throughput step-and-repeat projection lithography system that can pattern feature sizes down to 350nm
Location Photo-Lithography Bay, RPF Cleanroom
Material systems Substrate material compatibility: wafers (silicon, glass, sapphire, etc.) with maximum thickness of 1.25mm
Scale / volume Feature sizes down to 350nm; die size limited to 22mm x 22mm; 400nm; accommodates 4 inch and 6 inch wafers
Specs / resolution 5x reduction in critical dimensions; well suited to demonstrating scalable batch processes on 6 inch wafers at low to medium volume production; high throughput wafer processing together with the SVG88 Rite Track for coating and development

IBS Ion Implanter

Location UNSW – Far East Lab
Ion energy 25-200 keV (single charge)
Ion current Greater than 1 mA (typically ~100s uA)
Species P, B, Sb, Ar, H, N
Substrate size Max 6” wafer
Substrate carrier 4 positions
Substrate angle to beam Normal or 7°

ICP RIE Oxford Plasmalab 100 *

Purpose A dry etching tool that etches Si and Si-based materials with an inductive-coupled plasma source in the process chamber
Location Plasma Etch & Deposition Bay, RPF Cleanroom
Material systems Available gases are SF6, C4F8, CF4, CHF3, supported with argon, oxygen, and helium
Scale / volume Either 4 inch or 6 inch carrier
Specs / resolution Cryo processes; pseudo Bosch; resist masks; in-situ optical monitoring for etch stop
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

Jipelec RTA

Location UNSW – Upper East Lab (Grey Area)
Temperature range 400 – 1050 °C
Substrates types allowed Si wafer, with either P or B dopants only
Substrate sizes Up to 4”
Pre-requisites Wafers processed in-house only, full cleaned
Gases available N2

K and S Al Wedge Bonder

Location UNSW – South Lab (Test Area)
Wire material Al, 25 microns diameter
Bonding modes 45 deg, manual, semi-automatic (Z-axis)

Karl Suss Manual Wafer Scriber

Location UNSW – South Lab (Test Area)
Wafer size Small pieces up to 100 mm
Scriber tip Diamond tip

Lamp Annealer ULVAC MILA 5000 *

Purpose A desktop annealer capable of delivering high speed heating and cooling
Location Wet Etch Bay, RPF Cleanroom
Material systems Gases available N2 and forming gas
Scale / volume Maximum wafer size 20mm x 20mm
Specs / resolution Maximum temperature of 1000°C; 50°C/s high speed heating
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

Laser Cutter Universal VLS3.60 *

Purpose The Universal VLS3.60 laser cutter is a high performance, floor-standing platform manufactured in the USA and comes with a powerful 50 watt CO2 laser system
Location RPF Madsen Lab 224A
Material systems The VLS3.60 laser cutter is gas assist capable and has been designed for high material throughput producing high accuracy parts.
Scale / volume The machine has a materials processing area of 610mm x 305mm x 229mm
Specs / resolution The machine is paired with Coreldraw2019 software for optimum design capability and ease of use; the VLS3.60 capable of cutting extruded acrylic sheet up to 12mm thickness
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

Laser Writer Heidelberg DWL 66+

Purpose Direct write laser lithography system capable of high resolution and grayscale patterning; UV laser direct-write system at submicron resolution for quick prototyping
Location Photo-Lithography Bay, RPF Cleanroom
Material systems Photoresist coated substrates with up to 6mm thickness
Scale / volume 375nm laser wavelength; accommodates up to 9 inch wafers;
Specs / resolution 800nm; maximum write area 200mm x 200mm; multiple write modes – capable of achieving submicron features with highest resolution

Mask Aligner EVG 610 *

Purpose A photolithography tool that supports top and back sides mask alignment and can pattern with feature size in micron; vacuum contact, soft contact, proximity exposure modes
Location Photo-Lithography Bay, RPF Cleanroom
Material systems Photomasks and photoresist-coated substrates
Scale / volume Photomask sizes: 4 inch, 5 inch, and 7 inch; substrate size: 2 inch, 4 inch, and 6 inch
Specs / resolution Vacuum contact: 1 – 1.5um; soft contact: 1.5 – 3um; proximity: >3um
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

Maskless Aligner Heidelberg MLA100 *

Purpose A fast-speed maskless alignment photolithography tool that patterns feature size down to 2um; UV LED direct-write system for feature sizes at the micron level
Location Photo-Lithography Bay, RPF Cleanroom
Material systems Photoresist coated substrates with up to 6mm thickness
Scale / volume 365nm LED wavelength, fast writing speed; accommodates up to 6 inch wafers
Specs / resolution 2um; maximum write area is 125mm x125mm
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

Microscope Nikon Eclipse LV100ND

Purpose A manual upright optical microscope with NIS Software and UV source
Location Metrology Bay, RPF Cleanroom
Scale / volume Can accommodate up to 150mm wafers
Specs / resolution Combined reflectance / transmitted illumination with brightfield, darkfield, DIC, fluorescence, polarising, and phase-contrast; resolution limit is ≈300nm

MJB3 Mask Aligner

Location UNSW – Lower East Lab (White Area)
Sample holder size From small chips up to 3” wafers
Mask holder size 4” square
Exposure modes Vacuum, soft contact, hard contact
UV lamp spec 365nm, 10 mW/cm2

Muffle Furnace

Location UNSW – West Lab (White Area)
Working volume 3.5 L
Temperature range 50 – 1000°C
Gases N2

NanoFab Helium Ion Beam Zeiss *

Purpose A metrology and fabrication tool that enables imaging and fabrication at resolutions below what is possible in scanning electron microscopes
Location RPF HIM Suite
Scale / volume Sample sizes are limited to 50mm diameter and 30mm height
Specs / resolution It is fitted with components for imaging non-conductive materials, nanoscale milling / deposition, and circuit editing; image resolution is ≈0.5nm, with ultimate limits of ≈1.5nm to 5 µm for milling / deposition
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

NMP Bath (photomask cleaning)

Location UNSW – Upper East Lab (white area)
Constant temperature bath NMP at 80C
Other capabilities ultrasonic
Mask size up to 5”

O2 Plasma Asher Glow *

Purpose A small plasma system that provides O2 plasma surface treatment such as wafer cleaning and photoresist / organic removal
Location Plasma Etch & Deposition Bay, RPF Cleanroom
Material systems Available gas is oxygen
Scale / volume 10cm x 10cm samples
Specs / resolution 50W RF power
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

Olympus BH2 Microscope

Location UNSW – Lower East Lab (White Area)
Sample size From small chips up to 4”
Objective magnifications 5X, 10X, 20X, 50X, 100X
Features Nomarski DIC Prism available on 50X objective

Olympus BX51 Phase Contrast & Darkfield Microscope

Location UNSW – West Lab (White Area)
Sample size From small chips up to 4”
Objective magnifications 5X, 10X, 20X, 50X, 100X
Features Darkfield & Phase Contrast

Optical Microscopes Olympus DSX 510 *

Purpose A semi-automated upright digital optical microscope with LED light source
Location Metrology Bay, RPF Cleanroom
Scale / volume Can accommodate up to 150mm wafers with 100mm x 100mm addressable area
Specs / resolution Reflectance illumination with brightfield, darkfield, DIC, and polarising; resolution limit is ≈300nm
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

Parylene Coater

Location UNSW – South Lab (Test Area)
Sample type ALL (but contamination or hazardous ones)
Sample size Up to 6” wafer (4 tiers substrates holder)
Adhesion promoter Silane A-174
Thickness range 100 nm to 10um

(Thicker layer on request)

Dimer type Parylene C

PDMS Process Tools

Purpose Casting PDMS devices from a master to replicate features up to nanoscale
Location RPF Lab 3021
Material systems Master material can be silicon, glass, aluminium, plastic, or polymer based substrate
Scale / volume Throughput is up to one 4 inch device per hour
Specs / resolution Can replicate features from 300nm and above

PDMS Station

Location UNSW – Lower East lab (Grey Area)
Silicon Elastomer Sylgard 184 (Dow Corning)
Thickness Range PDMS membranes (10-500um)

PDMS blocks (1-10mm)

Phosphorus Diffusion Furnace

Location UNSW – Upper East Lab (Grey Area)
Temperature range 800 – 955 °C
Substrates types allowed Si wafer, with either P or B dopants only
Substrate sizes Up to 2”
Pre-requisites Wafers processed in-house only, full cleaned
Gases available N2
Source wafers Solid source

Photo Spinner Wet Bench (ReynoldsTech)

Purpose Exhausted wet bench used for resist coating processes dedicated to thicker photolithography based resists
Location Wet Process Bay, RPF Cleanroom
Material systems Substrates to be coated with photoresist
Specs / resolution Includes three spinners dedicated to positive, negative, and thick resist processes

Process Spin Rinse Dryer (ReynoldsTech)

Purpose Automated batch wafer cleaning tool
Location Wet Process Bay, RPF Cleanroom
Material systems Can batch process substrates in a cassette
Scale / volume 2 inch, 4 inch, and 6 inch wafers; 4 inch and 5 inch photomasks
Specs / resolution Can accommodate up to 6 inch wafers, interchangeable rotors

Reactive Ion Etcher (Plasmatherm Vision) *

Purpose A compact reactive ion etching tool
Location Plasma Etch & Deposition Bay, RPF Cleanroom
Material systems Available gases are SF6, CF4, CHF3, supported with argon, oxygen, helium and nitrogen
Scale / volume Accommodates 6 inch wafers
Specs / resolution Optical emission spectroscopy endpoint detection
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

Reactive Ion Etcher (South Bay RIE3000)

Purpose Reactive ion etch system dedicated to oxygen and argon plasma processes
Location Plasma Etch & Deposition Bay, RPF Cleanroom
Material systems Available gases are argon and oxygen
Scale / volume Accommodates 6 inch wafers
Specs / resolution Used primarily for resist and sample cleaning

Solvent Develop Wet Bench (ReynoldsTech)

Purpose Exhausted wet bench used for solvent based development processes
Location Wet Process Bay, RPF Cleanroom
Material systems Solvents
Scale / volume Accommodates small samples up to 6 inch wafers
Specs / resolution Includes cold plate for cold development processes

Solvent Lift-off Wet Bench (ReynoldsTech)

Purpose Exhausted wet bench used for solvent based metal lift-off and cleaning processes
Location Wet Process Bay, RPF Cleanroom
Material systems Substrates
Specs / resolution Includes 3 heated ultrasonic tanks, an ambient filtered tank, and a cascading tank

Spin coater (lower east)

Location UNSW – East lab (White Area)
Sample size Small chips up to 4” wafers
Spin speed Up to 8000 rpm

Spin Coater (West white)

Location UNSW – West Lab (White Area)
Sample size From small chips up to 6”
Max spin speed 10k rpm
Max acceleration 7300 rpm
Recipes Multistep user programmable recipes

Spin Dryer Delta 15

Purpose An automated single wafer substrate cleaning tool using DI water and compressed air
Location Wet Process Bay, RPF Cleanroom
Scale / volume 4 inch and 6 inch wafers; 4 inch, 5 inch, 6 inch, and 7 inch photomasks

Sputter Coater DC Emitech K550

Purpose A small DC sputtering tool that can coat metal onto substrate
Location Plasma Etch & Deposition Bay, RPF Cleanroom
Material systems Available metal targets include Au, Ti, and Ni
Scale / volume Small pieces to 6 inch substrates
Specs / resolution Multiple small substrates for coating; coating uniformity up to 3.5 inch diameter

Sputterer AJA ATC-2000-UHV *

Purpose A 5-gun DC/RF sputtering system that deposits metal and oxides at a controlled angstrom per second rate
Location Plasma Etch & Deposition Bay, RPF Cleanroom
Material systems Available materials include NbTi(N), SiO2, TiO2, ITO, Al, and Ti
Scale / volume Small pieces to 6 inch substrates
Specs / resolution Base pressure lower than 5 x10-8 torr; in-situ ion milling available; RF biased sample pre-clean available; substrate rotation with heating up to 800oC; ion milling / assisted deposition with Argon; controlled oxidation or nitration capability
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

STS ICP-DRIE

Location UNSW – West Lab (Grey Area)
ICP Power 1800 W
Target power 600 W
Gases Ar, O2, CHF3, CF4, SF6, C4F8, He
Bosch process YES
Substrate size 4”
Electrostatic Clamp YES

Stylus Profilometer DekTak XT *

Purpose The Dektak XT profilometer is a stylus profiler capable of measuring step heights, film stress, and surface roughness
Location Metrology Bay, RPF Cleanroom
Scale / volume Can accommodate up to 150mm wafers
Specs / resolution This tool is generally used for measuring 2D profiles and has a 0.1nm vertical resolution
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

Tegal Plasmaline 411 Asher

Location UNSW – West Lab (White Area)
Sample size From small chips up to 6”
RF power 0-200W

TPT HB10 Thermosonic Au Ball Bonder

Location UNSW – South Lab (Test Area)
Wire material Au, 25 microns diameter
Bonding modes Manual, semi-automatic (Z-axis)
Options Laser marker, video camera

UDOX Furnace

Location UNSW – Upper East Lab (Grey Area)
Temperature range 800 – 1000 °C
Substrates types allowed Si wafer, with either P or B dopants only
Substrate sizes Up to 2”
Pre-requisites Wafers processed in-house only, full cleaned
Gases available N2, ultra-dry oxygen

Wafer Track Processor Rite Track SVG88

Purpose A fully automated system for spin coating, HMDS application, baking, and development
Location Photo-Lithography Bay, RPF Cleanroom
Material systems Auto dispense of resist – standard SPR660, and another type; MF26 developer
Scale / volume Throughput of up to 60 wafers per hour; accommodates 3 inch, 4 inch and 6 inch wafers
Specs / resolution Capable of running 25 wafers at a time; the system is well suited to batch scale production, providing high process performance and consistency in coating and development

Wire Bonder TPT HB 100 *

Purpose The TPT wire bonder is capable of performing automatic and semi-automatic wire bonding with gold and aluminium wires
Location RPF Lab 3021
Material systems Samples on PCB
Specs / resolution Capable of manual, semi-auto and auto mode; wedge and ball bonding; deep access bond head
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

Veeco Gen930 III-V MBE

Location UNSW – South Lab
Purpose epitaxial growth of III-V materials
Material systems III-V semiconductors
Source materials Ga, In, Al, As, Sb, Bi
Dopant materials Si, Be
Scale/volume wafers up to 75mm diameter

Pascal pulsed laser epitaxial system

Location UNSW – South Lab
Purpose materials scouting via epitaxial growth techniques
Substrate materials wide range of substrate materials
Source materials
Scale/volume Single wafers up to 25mm diameter
Specifications high energy 248nm excimer laser, in-situ reflective high energy electron diffraction (RHEED), substrate temperatures up to 1000C

Raith 150TWO Electron Beam Lithography System

Location UNSW – West Lab (White Area)
Sample size From small chips up to 6”
SEM ZEISS
Column Gemini  0-30kV
Apertures 7.5 10 15 20 30 60 120micron
FBMS Available
Laser Height Sensing Available
Focusing during exposure By Column or by Stage Adjustment
Stitching Write Fields capability Available
Smallest step size 2nm
Beam shape Spot
EBL resists available Positive PMMA 950k, CSAR 9% and 18%,

negative Ma-N2403

Detectors In-lens and SE

Karl Suss MA6 mask aligner

Location UNSW – West Lab (White Area)
Light source illumination i-line (365nm)
Light Intensity 10 mW/cm2
Resolution Down to 1 um

(depends on substrate size and flatness, resist type and thickness, and cleanroom conditions, and therefore, might vary for different processes)

Substrate size Pieces from 5x5mm2, to 6” wafer
Photomask size 4”, 5” and 7”
Exposure modes Contact (Soft, Hard, Vacuum, Low vacuum)

Flood exposure

Alignment method Top Side alignment (TSA)

Bottom Side alignment (BSA)

Lesker PVD75 e-beam evaporator - Si-MOS compatible

Location UNSW – West Lab (Grey Area)
Sample type Silicon Only – Si-MOS Compatible
Sample size Up to 4” wafer
Material available Ti, Al, Pt and Pd
Thickness range 1nm to 500nm
Option Plasma clean capability by Ar sputtering

Lesker PVD75 e-beam evaporator - general purpose

Location UNSW – West Lab (Grey Area)
Sample type ALL (but contamination or hazardous ones)
Sample size Up to 6” wafer
Material available Metals:  Ag, Al, Au, Co, Cr, Cu, Fe, Ge, Ir, Nb, Ni, NiFe, Pd, Pt, Si, Sn, Ti

Oxides:  Al2O3, CeO2, Fe2O3, In2O3, SiO2, TiO2, WO3

Other materials by prior approval

Thickness range 1nm to 500nm (Thicker layer on request)

HHV sputtering system

Location UNSW – West Lab (Grey Area)
Sputter gases Ar, N2, O2
Target materials (3” targets) Ti, Al, Cr, Au, Cu, W, Nb, Ag, Si, ITO, Si3N4, SiO2, TiO2, ZnO
RF power 600W max
2000W max
Chamber heating Room Temp to 400
Max sample size 6”
Base pressure Mid 10-8 mtorr

Oxford Instruments Plasmalab 100 plasma-enhanced chemical vapour deposition system

Location UNSW – Upper East Lab (Grey Area)
Materials SiO2, SiN, a-Si:H
Temperature range 100 – 300C
Wafer size Small chips up to 6”
Gasses SiH4, NH3, N2O, N2, Ar, CF4
Restrictions no metals

Oxford Instruments Plasmalab 100 Reactive Ion Etching System

Location UNSW – Upper East Lab (Grey Area)
Sample size From small chips up to 6”
Gases SF6, CF4, CHF3, O2, Ar,C4F8, N2
RF power 0-300W
Processes available Si deep and shallow, SiO2, SiNx, Ge, Al2O3
Process Pressure range 5-250mTorr
Chiller temperature range 0-80°C
 DC range 0-500V

J A Woollam spectroscopic ellipsometer

Location UNSW – West Lab (Grey Area)
Modes Spectral ellipsometry, transmission measurements
Wavelength range 200 – 1000nm
Spot size 3x3mm
Stage No scanning
Wafer size Small chips up to 6”
Software WASE, Complete EASE

Disco DAD3240 dicing saw

Location UNSW – West Lab (Grey Area)
Table size 8″
Available blades Si with 0.8mm exposure, and 0.035mm kerf
Si with 1.1 mm exposure, and 0.06mm kerf
Glass up to 2mm thick with 0.2mm kerf
Sapphire up to 2mm with 0.2mm kerf
Quartz up to 2mm with 0.15mm kerf