Dry Etching

Hollow Cathode Reactive Ion Etching System

Location UNSW – Upper East Lab (Grey Area)
Target Area 4”
Substrate size < 4”
Gases Ar, O2, CF4, CHF3, SF6
Max process pressure Up to 130 mTorr
Max target power density 1.7W / cm2

ICP RIE Oxford Plasmalab 100 *

Purpose A dry etching tool that etches Si and Si-based materials with an inductive-coupled plasma source in the process chamber
Location Plasma Etch & Deposition Bay, RPF Cleanroom
Material systems Available gases are SF6, C4F8, CF4, CHF3, supported with argon, oxygen, and helium
Scale / volume Either 4 inch or 6 inch carrier
Specs / resolution Cryo processes; pseudo Bosch; resist masks; in-situ optical monitoring for etch stop
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

O2 Plasma Asher Glow *

Purpose A small plasma system that provides O2 plasma surface treatment such as wafer cleaning and photoresist / organic removal
Location Plasma Etch & Deposition Bay, RPF Cleanroom
Material systems Available gas is oxygen
Scale / volume 10cm x 10cm samples
Specs / resolution 50W RF power
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

Reactive Ion Etcher (Plasmatherm Vision) *

Purpose A compact reactive ion etching tool
Location Plasma Etch & Deposition Bay, RPF Cleanroom
Material systems Available gases are SF6, CF4, CHF3, supported with argon, oxygen, helium and nitrogen
Scale / volume Accommodates 6 inch wafers
Specs / resolution Optical emission spectroscopy endpoint detection
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

Reactive Ion Etcher (South Bay RIE3000)

Purpose Reactive ion etch system dedicated to oxygen and argon plasma processes
Location Plasma Etch & Deposition Bay, RPF Cleanroom
Material systems Available gases are argon and oxygen
Scale / volume Accommodates 6 inch wafers
Specs / resolution Used primarily for resist and sample cleaning

STS ICP-DRIE

Location UNSW – West Lab (Grey Area)
ICP Power 1800 W
Target power 600 W
Gases Ar, O2, CHF3, CF4, SF6, C4F8, He
Bosch process YES
Substrate size 4”
Electrostatic Clamp YES

Tegal Plasmaline 411 Asher

Location UNSW – West Lab (White Area)
Sample size From small chips up to 6”
RF power 0-200W

Oxford Instruments Plasmalab 100 Reactive Ion Etching System

Location UNSW – Upper East Lab (Grey Area)
Sample size From small chips up to 6”
Gases SF6, CF4, CHF3, O2, Ar,C4F8, N2
RF power 0-300W
Processes available Si deep and shallow, SiO2, SiNx, Ge, Al2O3
Process Pressure range 5-250mTorr
Chiller temperature range 0-80°C
 DC range 0-500V