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Goh, K. E. J. and Simmons, M. Y. (2009). “Impact of Si growth rate on coherent electron transport in Si:P delta-doped devices.” Applied Physics Letters 95(14). DOI: 10.1063/1.3245313

Ho, L. H., Micolich, A. P., Hamilton, A. R. and Sushkov, O. P. (2009). “Ground-plane screening of Coulomb interactions in two-dimensional systems: How effectively can one two-dimensional system screen interactions in another.” Physical Review B 80(15). DOI: 10.1103/PHYSREVB.80.155412

Klochan, O., Micolich, A. P., Ho, L. H., Hamilton, A. R., Muraki, K. and Hirayama, Y. (2009). “The interplay between one-dimensional confinement and two-dimensional crystallographic anisotropy effects in ballistic hole quantum wires.” New Journal of Physics 11. DOI: 10.1088/1367-2630/11/4/043018

Lai, N. S., Lim, W. H., Ziebell, A. L., Reinhard, M. I., Rosenfeld, A. B. and Dzurak, A. S. (2009). “Development and Fabrication of Cylindrical Silicon-on-Insulator Microdosimeter Arrays.” IEEE Transactions on Nuclear Science 56(3): 1637-1641. DOI: 10.1109/TNS.2009.2015317

Lim, W. H., Huebl, H., van Beveren, L. H. W., Rubanov, S., Spizzirri, P. G., Angus, S. J., Clark, R. G. and Dzurak, A. S. (2009). “Electrostatically defined few-electron double quantum dot in silicon.” Applied Physics Letters 94(17). DOI: 10.1063/1.3124242

Lim, W. H., Ziebell, A. L., Cornelius, I., Reinhard, M. I., Prokopovich, D. A., Dzurak, A. S. and Rosenfeld, A. B. (2009). “Cylindrical Silicon-on-Insulator Microdosimeter: Design, Fabrication and TCAD Modeling.” IEEE Transactions on Nuclear Science 56(2): 424-428. DOI: 10.1109/TNS.2009.2013467

Lim, W. H., Zwanenburg, F. A., Huebl, H., Mottonen, M., Chan, K. W., Morello, A. and Dzurak, A. S. (2009). “Observation of the single-electron regime in a highly tunable silicon quantum dot.” Applied Physics Letters 95(24). DOI: 10.1063/1.3272858

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McKibbin, S. R., Clarke, W. R., Fuhrer, A., Reusch, T. C. G. and Simmons, M. Y. (2009). “Investigating the regrowth surface of Si:P delta-layers toward vertically stacked three dimensional devices.” Applied Physics Letters 95(23). DOI: 10.1063/1.3269924

Perez-Wurfl, I., Hao, X. J., Gentle, A., Kim, D. H., Conibeer, G. and Green, M. A. (2009). “Si nanocrystal p-i-n diodes fabricated on quartz substrates for third generation solar cell applications.” Applied Physics Letters 95(15). DOI: 10.1063/1.3240882

Reusch, T. C. G., Fuhrer, A., Fuchsle, M., Weber, B. and Simmons, M. Y. (2009). “Aharonov-Bohm oscillations in a nanoscale dopant ring in silicon.” Applied Physics Letters 95(3). DOI: 10.1063/1.3186031

Scappucci, G., Capellini, G., Lee, W. C. T. and Simmons, M. Y. (2009). “Ultradense phosphorus in germanium delta-doped layers.” Applied Physics Letters 94(16). DOI: 10.1063/1.3123391

Scappucci, G., Capellini, G. and Simmons, M. Y. (2009). “Influence of encapsulation temperature on Ge:P delta-doped layers.” Physical Review B 80(23). DOI: 10.1103/PHYSREVB.80.233202

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