Ahnood, A., Escudie, M. C., Cicione, R., Abeyrathne, C. D., Ganesan, K., Fox, K. E., Garrett, D. J., Stacey, A., Apollo, N. V., Lichter, S. G., Thomas, C. D. L., Tran, N., Meffin, H. and Prawer, S. (2015). “Ultrananocrystalline diamond-CMOS device integration route for high acuity retinal prostheses.” Biomedical Microdevices 17(3). DOI: 10.1007/S10544-015-9952-Y

Buch, H., Fuechsle, M., Baker, W., House, M. G. and Simmons, M. Y. (2015). “Quantum dot spectroscopy using a single phosphorus donor.” Physical Review B 92(23). DOI: 10.1103/PHYSREVB.92.235309

Burke, A. M., Carrad, D. J., Gluschke, J. G., Storm, K., Svensson, S. F., Linke, H., Samuelson, L. and Micolich, A. P. (2015). “InAs Nanowire Transistors with Multiple, Independent Wrap-Gate Segments.” Nano Letters 15(5): 2836-2843. DOI: 10.1021/NL5043243

Casas-Bedoya, A., Morrison, B., Pagani, M., Marpaung, D. and Eggleton, B. J. (2015). “Tunable narrowband microwave photonic filter created by stimulated Brillouin scattering from a silicon nanowire.” Optics Letters 40(17): 4154-4157. DOI: 10.1364/OL.40.004154

Cedergren, K., Kafanov, S., Smirr, J. L., Cole, J. H. and Duty, T. (2015). “Parity effect and single-electron injection for Josephson junction chains deep in the insulating state.” Physical Review B 92(10). DOI: 10.1103/PHYSREVB.92.104513

Chartier, L., Tran, L. T., Bolst, D., Prokopovich, D. A., Reinhard, M. I., Petasecca, M., Lerch, M., Povoli, M., Kok, A., Matsufuji, N., Nancarrow, M. and Rosenfeld, A. B. (2015). “Characterization of a Large Area Thinned Silicon Microdosimeter for Space and Particle Therapy.” IEEE Transactions On Nuclear Science 62(6): 3003-3011. DOI: 10.1109/TNS.2015.2488679

Chen, J. C. H., Klochan, O., Micolich, A. P., Das Gupta, K., Sfigakis, F., Ritchie, D. A., Trunov, K., Reuter, D., Wieck, A. D. and Hamilton, A. R. (2015). “Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts.” Applied Physics Letters 106(18). DOI: 10.1063/1.4918934

Choudhury, M. H., Ciampi, S., Yang, Y., Tavallaie, R., Zhu, Y., Zarei, L., Goncales, V. R. and Gooding, J. J. (2015). “Connecting electrodes with light: one wire, many electrodes.” Chemical Science 6(12): 6769-6776. DOI: 10.1039/C5SC03011K

Diaz, M., Wang, L., Li, D., Zhao, X., Conrad, B., Soeriyadi, A., Gerger, A., Lochtefeld, A., Ebert, C., Opila, R., Perez-Wurfl, I. and Barnett, A. (2015). “Tandem GaAsP/SiGe on Si solar cells.” Solar Energy Materials and Solar Cells 143: 113-119. DOI: 10.1016/J.SOLMAT.2015.06.033

Fogarty, M. A., Veldhorst, M., Harper, R., Yang, C. H., Bartlett, S. D., Flammia, S. T. and Dzurak, A. S. (2015). “Nonexponential fidelity decay in randomized benchmarking with low-frequency noise.” Physical Review A 92(2). DOI: 10.1103/PHYSREVA.92.022326

Hile, S. J., House, M. G., Peretz, E., Verduijn, J., Widmann, D., Kobayashi, T., Rogge, S. and Simmons, M. Y. (2015). “Radio frequency reflectometry and charge sensing of a precision placed donor in silicon.” Applied Physics Letters 107(9). DOI: 10.1063/1.4929827

Holmes, N. P., Nicolaidis, N., Feron, K., Barr, M., Burke, K. B., Al-Mudhaffer, M., Sista, P., Kilcoyne, A. L. D., Stefan, M. C., Zhou, X. J., Dastoor, P. C. and Belcher, W. J. (2015). “Probing the origin of photocurrent in nanoparticulate organic photovoltaics.” Solar Energy Materials and Solar Cells 140: 412-421. DOI: 10.1016/J.SOLMAT.2015.04.044

Hornibrook, J. M., Colless, J. I., Lamb, I. D. C., Pauka, S. J., Lu, H., Gossard, A. C., Watson, J. D., Gardner, G. C., Fallahi, S., Manfra, M. J. and Reilly, D. J. (2015). “Cryogenic Control Architecture for Large-Scale Quantum Computing.” Physical Review Applied 3(2). DOI: 10.1103/PHYSREVAPPLIED.3.024010

House, M. G., Kobayashi, T., Weber, B., Hile, S. J., Watson, T. F., van der Heijden, J., Rogge, S. and Simmons, M. Y. (2015). “Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots.” Nature Communications 6. DOI: 10.1038/NCOMMS9848

Huang, H. H., Zhang, Q., Huang, E., Maran, R., Sakata, O., Ehara, Y., Shiraishi, T., Funakubo, H., Munroe, P. and Valanoor, N. (2015). “Epitaxial PbZrxTi1-xO3 Ferroelectric Bilayers with Giant Electromechanical Properties.” Advanced Materials Interfaces 2(8). DOI: 10.1002/ADMI.201500075

Jiang, Y. J., Pillai, S. and Green, M. A. (2015). “Re-evaluation of literature values of silver optical constants.” Optics Express 23(3): 2133-2144. DOI: 10.1364/OE.23.002133

Keizer, J. G., McKibbin, S. R. and Simmons, M. Y. (2015). “The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multi layers.” ACS Nano 9(7): 7080-7084. DOI: 10.1021/ACSNANO.5B01638

Keizer, K. G., Koelling, S., Koenraad, P. M. and Simmons, M. Y. (2015). “Suppressing Segregation in Highly Phosphorus Doped Silicon Monolayers.” ACS Nano 9(12): 12537-12541. DOI: 10.1021/ACSNANO.5B06299

Klochan, O., Hamilton, A. R., das Gupta, K., Sfigakis, F., Beere, H. E. and Ritchie, D. A. (2015). “Landau level spin diode in a GaAs two dimensional hole system.” New Journal of Physics 17. DOI: 10.1088/1367-2630/17/3/033035

Li, D., Zhao, X., Gerger, A., Opila, R., Wang, L., Conrad, B., Soeriyadi, A. H., Diaz, M., Lochtefeld, A., Barnett, A. and Perez-Wurfl, I. (2015). “Optical constants of silicon germanium films grown on silicon substrates.” Solar Energy Materials and Solar Cells 140: 69-76. DOI: 10.1016/J.SOLMAT.2015.03.031

Li, R. Y., Hudson, F. E., Dzurak, A. S. and Hamilton, A. R. (2015). “Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot.” Nano Letters 15(11): 7314-7318. DOI: 10.1021/ACS.NANOLETT.5B02561

Lin, Q. R., Wang, D. Y., Chen, Z. G., Liu, W. F., Lim, S. and Li, S. (2015). “Periodicity Dependence of the Built-in Electric Field in (Ba0.7Ca0.3)TiO3/Ba(Zr0.2Ti0.8)O-3 Ferroelectric Super lattices.” Acs Applied Materials & Interfaces 7(47): 26301-26306. DOI: 10.1021/ACSAMI.5B08943

MacLeod, S. J., See, A. M., Hamilton, A. R., Farrer, I., Ritchie, D. A., Ritzmann, J., Ludwig, A. and Wieck, A. D. (2015). “Hybrid architecture for shallow accumulation mode AlGaAs/GaAs heterostructures with epitaxial gates.” Applied Physics Letters 106(1). DOI: 10.1063/1.4905210

Michael, A., Kwok, C. Y., Wang, P., Kazuo, O. and Varlamov, S. (2015). “Investigation of E-Beam Evaporated Silicon Film Properties for MEMS Applications.” Journal of Microelectromechanical Systems 24(6): 1951-1959. DOI: 10.1109/JMEMS.2015.2453191

Muhonen, J. T., Laucht, A., Simmons, S., Dehollain, J. P., Kalra, R., Hudson, F. E., Freer, S., Itoh, K. M., Jamieson, D. N., McCallum, J. C., Dzurak, A. S. and Morello, A. (2015). “Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking.” Journal of Physics-Condensed Matter 27(15): 8. DOI: 10.1088/0953-8984/27/15/154205

Pagani, M., Morrison, B., Zhang, Y. B., Casas-Bedoya, A., Aalto, T., Harjanne, M., Kapulainen, M., Eggleton, B. J. and Marpaung, D. (2015). “Low-error and broadband microwave frequency measurement in a silicon chip.” Optica 2(8): 751-756. DOI: 10.1364/OPTICA.2.000751

Pawell, R. S., Taylor, R. A., Morris, K. V. and Barber, T. J. (2015). “Automating microfluidic part verification.” Microfluidics and Nanofluidics 18(4): 657-665. DOI: 10.1007/S10404-014-1464-1

Purches, W. E., Rossi, A., Zhao, R., Kafanov, S., Duty, T. L., Dzurak, A. S., Rogge, S. and Tettamanzi, G. C. (2015). “A planar Al-Si Schottky barrier metal-oxide-semiconductor field effect transistor operated at cryogenic temperatures.” Applied Physics Letters 107(6). DOI: 10.1063/1.4928589

Rendell, M., Klochan, O., Srinivasan, A., Farrer, I., Ritchie, D. A. and Hamilton, A. R. (2015). “Transverse magnetic focussing of heavy holes in a (100) GaAs quantum well.” Semiconductor Science and Technology 30(10). DOI: 10.1088/0268-1242/30/10/102001

Rossi, A., Tanttu, T., Hudson, F. E., Sun, Y., Mottonen, M. and Dzurak, A. S. (2015). “Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping.” Jove-Journal of Visualized Experiments(100). DOI: 10.3791/52852

Scappucci, G., Klesse, W. M., Yeoh, L. A., Carter, D. J., Warschkow, O., Marks, N. A., Jaeger, D. L., Capellini, G., Simmons, M. Y. and Hamilton, A. R. (2015). “Bottom-up assembly of metallic germanium.” Scientific Reports 5. DOI: 10.1038/SREP12948

See, A. M., Hamilton, A. R., Micolich, A. P., Aagesen, M. and Lindelof, P. E. (2015). “Using light and heat to controllably switch and reset disorder configuration in nanoscale devices.” Physical Review B 91(8). DOI: 10.1103/PHYSREVB.91.085417

Song, N., Young, M., Liu, F. Y., Erslev, P., Wilson, S., Harvey, S. P., Teeter, G., Huang, Y. D., Hao, X. J. and Green, M. A. (2015). “Epitaxial Cu2ZnSnS4 thin film on Si (111) 4 degrees substrate.” Applied Physics Letters 106(25). DOI: 10.1063/1.4922992

Svensson, S. F., Burke, A. M., Carrad, D. J., Leijnse, M., Linke, H. and Micolich, A. P. (2015). “Using Polymer Electrolyte Gates to Set-and-Freeze Threshold Voltage and Local Potential in Nanowire-based Devices and Thermoelectrics.” Advanced Functional Materials 25(2): 255-262. DOI: 10.1002/ADFM.201402921

Tanttu, T., Rossi, A., Tan, K. Y., Huhtinen, K. E., Chan, K. W., Mottonen, M. and Dzurak, A. S. (2015). “Electron counting in a silicon single-electron pump.” New Journal of Physics 17. DOI: 10.1088/1367-2630/17/10/103030

Tran, L. T., Chartier, L., Prokopovich, D. A., Reinhard, M. I., Petasecca, M., Guatelli, S., Lerch, M. L. F., Perevertaylo, V. L., Zaider, M., Matsufuji, N., Jackson, M., Nancarrow, M. and Rosenfeld, A. B. (2015). “3D-Mesa “Bridge” Silicon Microdosimeter: Charge Collection Study and Application to RBE Studies in C-12 Radiation Therapy.” IEEE Transactions On Nuclear Science 62(2): 504-511. DOI: 10.1109/TNS.2015.2391102

van Donkelaar, J., Yang, C., Alves, A. D. C., McCallum, J. C., Hougaard, C., Johnson, B. C., Hudson, F. E., Dzurak, A. S., Morello, A., Spemann, D. and Jamieson, D. N. (2015). “Single atom devices by ion implantation.” Journal of Physics-Condensed Matter 27(15). DOI: 10.1088/0953-8984/27/15/154204

Veldhorst, M., Ruskov, R., Yang, C. H., Hwang, J. C. C., Hudson, F. E., Flatte, M. E., Tahan, C., Itoh, K. M., Morello, A. and Dzurak, A. S. (2015). “Spin-orbit coupling and operation of multivalley spin qubits.” Physical Review B 92(20). DOI: 10.1103/PHYSREVB.92.201401

Veldhorst, M., Yang, C. H., Hwang, J. C. C., Huang, W., Dehollain, J. P., Muhonen, J. T., Simmons, S., Laucht, A., Hudson, F. E., Itoh, K. M., Morello, A. and Dzurak, A. S. (2015). “A two-qubit logic gate in silicon.” Nature 526(7573): 410-414. DOI: 10.1038/NATURE15263

Wang, L., Diaz, M., Conrad, B., Zhao, X., Li, D., Soeriyadi, A., Gerger, A., Lochtefeld, A., Ebert, C., Perez-Wurfl, I. and Barnett, A. (2015). “Material and Device Improvement of GaAsP Top Solar Cells for GaAsP/SiGe Tandem Solar Cells Grown on Si Substrates.” IEEE Journal of Photovoltaics 5(6): 1800-1804. DOI: 10.1109/JPHOTOV.2015.2459918

Watson, T. F., Weber, B., Buch, H., Fuechsle, M. and Simmons, M. Y. (2015). “Charge sensing of a few-donor double quantum dot in silicon.” Applied Physics Letters 107(23). DOI: 10.1063/1.4937576

Watson, T. F., Weber, B., House, M. G., Buch, H. and Simmons, M. Y. (2015). “High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single Donor D(-)Charge State.” Physical Review Letters 115(16). DOI: 10.1103/PHYSREVLETT.115.166806

Western, N. J., Perez-Wurfl, I., Wenham, S. R. and Bremner, S. P. (2015). “Point-contacting by localised dielectric breakdown: Characterisation of a metallisation technique for the rear surface of a solar cell.” Journal of Applied Physics 118(4). DOI: 10.1063/1.4927282

Western, N. J., Perez-Wurfl, I., Wenham, S. R. and Bremner, S. P. (2015). “Point-Contacting by Localized Dielectric Breakdown With Breakdown Fields Described by the Weibull Distribution.” IEEE Transactions on Electron Devices 62(6): 1826-1830. DOI: 10.1109/TED.2015.2423292

Zhang, Q., Valanoor, N. and Standard, O. (2015). “Epitaxial (001) BiFeO3 thin-films with excellent ferroelectric properties by chemical solution deposition-the role of gelation.” Journal of Materials Chemistry C 3(3): 582-595. DOI: 10.1039/C4TC02371D

Zhang, T., Puthen-Veettil, B., Wu, L. F., Jia, X. G., Lin, Z. Y., Yang, T. C. J., Conibeer, G. and Perez-Wurfl, I. (2015). “Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO2 by capacitance voltage measurement on inverted metal oxide semiconductor structure.” Journal of Applied Physics 118(15). DOI: 10.1063/1.4933288

Zhao, X., Li, D., Conrad, B., Wang, L., Soeriyadi, A. H., Diaz, M., Lochtefeld, A., Gerger, A., Perez-Wurfl, I. and Barnett, A. (2015). “Material and device analysis of SiGe solar cell in a GaAsP-SiGe dual junction solar cell on Si substrate.” Solar Energy Materials and Solar Cells 134: 114-121. DOI: 10.1016/J.SOLMAT.2014.11.027