Purpose: deposition of a-Si, Si3N4, SiO2

Location: Upper East Grey Area

Process gases: CF4, N2O, Ar, N2, SiH4, NH3

Deposition materials: a-Si, Si3N4, ammonia-free Si3N4, low stress Si3N4, SiO2

Approved substrate materials: Si, SiO2, Si3N4, sapphire, glass. Other substrates by prior approval.

Scale/volume: Single wafer up to 150mm diameter

Specifications/resolution: 13.56MHz 300W RF generator with auto matching unit. LF generator for low stress nitride films.