Purpose: shallow etching of Si based materials
Location: Upper East Grey Area
Process gases: O2, SF6, CF4, CHF3, Ar, CH4
Approved materials: Si, SiO2, Si3N4, Ge, (no metals)
Approved masks: photoresists, HSQ, SiO2, a-Si, poly-Si, chrome, alumina, PMMA
Scale/volume: Single wafer up to 150mm diameter
Specifications/resolution: 13.56MHz 300W RF generator with auto matching unit.