Purpose: shallow etching of Si based materials

Location: Upper East Grey Area

Process gases: O2, SF6, CF4, CHF3, Ar, CH4

Approved materials: Si, SiO2, Si3N4, Ge, (no metals)

Approved masks: photoresists, HSQ, SiO2, a-Si, poly-Si, chrome, alumina, PMMA

Scale/volume: Single wafer up to 150mm diameter

Specifications/resolution: 13.56MHz 300W RF generator with auto matching unit.