Location | UNSW – South Lab |
Purpose | epitaxial growth of III-V materials |
Material systems | III-V semiconductors |
Source materials | Ga, In, Al, As, Sb, Bi |
Dopant materials | Si, Be |
Scale/volume | wafers up to 75mm diameter |
Location | UNSW – South Lab |
Purpose | epitaxial growth of III-V materials |
Material systems | III-V semiconductors |
Source materials | Ga, In, Al, As, Sb, Bi |
Dopant materials | Si, Be |
Scale/volume | wafers up to 75mm diameter |