Epitaxial Growth

Veeco Gen930 III-V MBE

Location UNSW – South Lab
Purpose epitaxial growth of III-V materials
Material systems III-V semiconductors
Source materials Ga, In, Al, As, Sb, Bi
Dopant materials Si, Be
Scale/volume wafers up to 75mm diameter

Pascal pulsed laser epitaxial system

Location UNSW – South Lab
Purpose materials scouting via epitaxial growth techniques
Substrate materials wide range of substrate materials
Source materials
Scale/volume Single wafers up to 25mm diameter
Specifications high energy 248nm excimer laser, in-situ reflective high energy electron diffraction (RHEED), substrate temperatures up to 1000C