Thin Film Deposition

Atomic Layer Deposition Picosun R200 *

Purpose A thin-film deposition tool that deposits Al2O3 and HfO2 via sequential, self-limiting process cycles with precise thickness control
Location Plasma Etch & Deposition Bay, RPF Cleanroom
Material systems Thermal, plasma, and ozone processes
Scale / volume Small pieces up to 6 inch substrates
Specs / resolution Specified to be able to deposit nitrides; techniques include thermal, plasma, and ozone processes; low temperature deposition process with uniform and conformal films
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

CNT Savannah S200 atomic layer deposition system

Location UNSW – West Lab (White Area)
Materials AlOx, HfO2
Temperature range 80 – 280C
Wafer size Small chips up to 6”
Precursors H2O, TMA, TDM
Restrictions General purpose

E-Beam Thermal Evaporator AJA ATC-1800-E *

Purpose A thin film deposition tool using e-beam or thermal process to deposit metal and oxides at nanometer scale thickness
Location Plasma Etch & Deposition Bay, RPF Cleanroom
Material systems Available materials include Ag, Al, Au, Cr, Ge, Ni, Ti, SiO2, TiO2, Ta2O, and Pt
Scale / volume Small pieces to 6 inch substrates
Specs / resolution Angled deposition capability; cooled rotating substrate holder; in-situ ion milling with Argon; controlled oxidation capability
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

Edwards Auto 306 Thermal Evaporator (Aluminum SET)

Location UNSW – Lower East Lab (White Area)
Thin film material Aluminium only
Gas Oxygen, upper chamber for oxidation of Al only
Sample size Up to 1 inch diameter (upper chamber)
Substrate material restriction silicon compatible material only

Edwards Auto 306 Thermal Evaporator (AuBe)

Location UNSW – Lower East Lab (White Area)
Thin film material AuBe, Ti, Au
Base pressure 9e-7 mbar
Sample size Up to 3 inch in diameter
Substrate material restriction Gallium arsenide compatible material only

Edwards Evaporator

Location UNSW – South Lab (Test Area)
Maximum wafer size 150 mm round
Throw 400 mm
Boat contact size 3/8” (~10 mm)
Maximum number of evaporator sources 4
Maximum power 250 W
Additional process gases available Ar, O2
Other specifications Glow discharge of process gases

Edwards Sputterer

Location UNSW – South Lab (Tese Area)
Sample size Up to 4” wafer
Target size 4” (Single target)
Material available Ti and Cr

Other materials by prior approval

Power sources DC 10-300W and RF 10-300W
Process gases Ar, N2 and O2

Lesker Thermal Evaporator

Location UNSW – Lower East Lab (White Area)
Thin film material Ge, Ni, Ti, Au, AuGe, PdAu, Cr, Al, Co
Base pressure 9e-7 mbar
Sample size Up to 3 inch in diameter
Rotation Angled evaporation with rotation

Lamp Annealer ULVAC MILA 5000 *

Purpose A desktop annealer capable of delivering high speed heating and cooling
Location Wet Etch Bay, RPF Cleanroom
Material systems Gases available N2 and forming gas
Scale / volume Maximum wafer size 20mm x 20mm
Specs / resolution Maximum temperature of 1000°C; 50°C/s high speed heating
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

Parylene Coater

Location UNSW – South Lab (Test Area)
Sample type ALL (but contamination or hazardous ones)
Sample size Up to 6” wafer (4 tiers substrates holder)
Adhesion promoter Silane A-174
Thickness range 100 nm to 10um

(Thicker layer on request)

Dimer type Parylene C

Sputter Coater DC Emitech K550

Purpose A small DC sputtering tool that can coat metal onto substrate
Location Plasma Etch & Deposition Bay, RPF Cleanroom
Material systems Available metal targets include Au, Ti, and Ni
Scale / volume Small pieces to 6 inch substrates
Specs / resolution Multiple small substrates for coating; coating uniformity up to 3.5 inch diameter

Sputterer AJA ATC-2000-UHV *

Purpose A 5-gun DC/RF sputtering system that deposits metal and oxides at a controlled angstrom per second rate
Location Plasma Etch & Deposition Bay, RPF Cleanroom
Material systems Available materials include NbTi(N), SiO2, TiO2, ITO, Al, and Ti
Scale / volume Small pieces to 6 inch substrates
Specs / resolution Base pressure lower than 5 x10-8 torr; in-situ ion milling available; RF biased sample pre-clean available; substrate rotation with heating up to 800oC; ion milling / assisted deposition with Argon; controlled oxidation or nitration capability
* Not an ANFF-supported tool; access is available – refer to Access Fees schedule

Lesker PVD75 e-beam evaporator - Si-MOS compatible

Location UNSW – West Lab (Grey Area)
Sample type Silicon Only – Si-MOS Compatible
Sample size Up to 4” wafer
Material available Ti, Al, Pt and Pd
Thickness range 1nm to 500nm
Option Plasma clean capability by Ar sputtering

Lesker PVD75 e-beam evaporator - general purpose

Location UNSW – West Lab (Grey Area)
Sample type ALL (but contamination or hazardous ones)
Sample size Up to 6” wafer
Material available Metals:  Ag, Al, Au, Co, Cr, Cu, Fe, Ge, Ir, Nb, Ni, NiFe, Pd, Pt, Si, Sn, Ti

Oxides:  Al2O3, CeO2, Fe2O3, In2O3, SiO2, TiO2, WO3

Other materials by prior approval

Thickness range 1nm to 500nm (Thicker layer on request)

HHV sputtering system

Location UNSW – West Lab (Grey Area)
Sputter gases Ar, N2, O2
Target materials (3” targets) Ti, Al, Cr, Au, Cu, W, Nb, Ag, Si, ITO, Si3N4, SiO2, TiO2, ZnO
RF power 600W max
2000W max
Chamber heating Room Temp to 400
Max sample size 6”
Base pressure Mid 10-8 mtorr

Oxford Instruments Plasmalab 100 plasma-enhanced chemical vapour deposition system

Location UNSW – Upper East Lab (Grey Area)
Materials SiO2, SiN, a-Si:H
Temperature range 100 – 300C
Wafer size Small chips up to 6”
Gasses SiH4, NH3, N2O, N2, Ar, CF4
Restrictions no metals